IPD30N06S2-23 Infineon Technologies, IPD30N06S2-23 Datasheet - Page 2
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IPD30N06S2-23
Manufacturer Part Number
IPD30N06S2-23
Description
MOSFET N-CH 55V 30A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD30N06S2-23.pdf
(8 pages)
Specifications of IPD30N06S2-23
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
23 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
901pF @ 25V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
23 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
100 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000252166
Rev. 1.0
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
2)
j
=25 °C, unless otherwise specified
Symbol
R
R
R
V
V
I
I
R
DSS
GSS
DS(on)
(BR)DSS
GS(th)
thJC
thJA
thJA
minimal footprint
6 cm
V
V
V
T
V
T
V
V
j
j
GS
DS
DS
DS
GS
GS
=25 °C
=125 °C
page 2
=V
=55 V, V
=55 V, V
=0 V, I
=20 V, V
=10 V, I
2
Conditions
cooling area
GS
, I
2)
D
D
= 1 mA
D
=50 µA
GS
GS
DS
=21 A,
=0 V,
=0 V,
=0 V
3)
min.
2.1
55
-
-
-
-
-
-
-
-
Values
0.01
17.0
typ.
3.0
1
1
-
-
-
-
-
IPD30N06S2-23
max.
100
100
100
1.5
4.0
75
50
23
1
-
2006-07-18
Unit
K/W
V
µA
nA
mΩ