IPD64CN10N G Infineon Technologies, IPD64CN10N G Datasheet
IPD64CN10N G
Manufacturer Part Number
IPD64CN10N G
Description
MOSFET N-CH 100V 17A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD64CN10N_G.pdf
(10 pages)
Specifications of IPD64CN10N G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
64 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4V @ 20µA
Gate Charge (qg) @ Vgs
9nC @ 10V
Input Capacitance (ciss) @ Vds
569pF @ 50V
Power - Max
44W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
45mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000104810
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IPD64CN10N G Summary of contents
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