2SK3712-Z-E1-AZ Renesas Electronics America, 2SK3712-Z-E1-AZ Datasheet
2SK3712-Z-E1-AZ
Specifications of 2SK3712-Z-E1-AZ
Related parts for 2SK3712-Z-E1-AZ
2SK3712-Z-E1-AZ Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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... DESCRIPTION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage 250 V DSS • Gate voltage rating: ±30 V • Low on-state resistance = 0.58 Ω MAX. (V ...
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... R d(off 200 9 F(S- μ Q di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ τ μ ≤ Duty Cycle 1% Data Sheet D16372EJ3V0DS 2SK3712 MIN. TYP. MAX. UNIT μ μ ±10 A 2.5 3.5 4 Ω 0.45 0.58 450 pF 100 0.9 1.5 V 150 ns 630 90 10% ...
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... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 150 175 100 μ 1000 = 25° 125°C/W th(ch-A) = 25° 3.125°C/W th(ch- 100m Pulse Width - s Data Sheet D16372EJ3V0DS 2SK3712 50 75 100 125 150 175 - Case Temperature - ° 100 1000 3 ...
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... DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.3 Pulsed 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0 100 V - Gate to Source Voltage - V GS Data Sheet D16372EJ3V0DS 2SK3712 = −25° 25°C 75°C 125°C 150° Gate to Source Voltage - V 0 100 I - Drain Current - 9 ...
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... DYNAMIC INPUT/OUTPUT CHARACTERISTICS 250 200 V DD 150 100 100 Q - Gate Charge - nC G REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 di/dt = 100 A/ μ 100 10 1 1.5 0 Diode Forward Current - A F Data Sheet D16372EJ3V0DS 2SK3712 C iss C oss C rss 10 100 1000 200 V 125 V 62 100 5 ...
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... SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 V = 125 → Ω 8 0.01 0 Inductive Load - mH 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 100 125 Ω → ≤ Starting T - Starting Channel Temperature - °C ch Data Sheet D16372EJ3V0DS 2SK3712 75 100 125 150 ...
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... TO-252 (MP-3Z) 6.5 ±0.2 5.0 ±0.2 4.4 ±0 2.3 ±0.3 Note The depth of notch at the top of the fin is from 0 to 0.2 mm. Data Sheet D16372EJ3V0DS 2SK3712 2.3 ±0.2 0.5 ±0.1 Note Note 0.5 ±0.1 0.5 ±0.1 2.3 ±0.3 0.15 ±0.15 1. Gate 2 ...
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... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK3712 M8E 02. 11-1 ...