IPD90N06S4-04 Infineon Technologies, IPD90N06S4-04 Datasheet

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IPD90N06S4-04

Manufacturer Part Number
IPD90N06S4-04
Description
MOSFET N-CH 60V 90A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD90N06S4-04

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.8 mOhm @ 90A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 90µA
Gate Charge (qg) @ Vgs
128nC @ 10V
Input Capacitance (ciss) @ Vds
10400pF @ 25V
Power - Max
150W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (5 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD90N06S4-04
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPD90N06S4-04
0
Rev. 1.2
OptiMOS
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPD90N06S4-04
®
-T2 Power-Transistor
2)
Package
PG-TO252-3-11
j
=25 °C, unless otherwise specified
1)
2)
Symbol
I
I
E
I
V
P
T
-
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
4N0604
stg
T
T
T
I
-
-
T
-
-
D
C
C
C
C
=45A
page 1
=25°C, V
=100°C, V
=25°C
=25°C
Conditions
GS
GS
Product Summary
V
R
I
=10V
D
DS
DS(on),max
=10V
2)
-55 ... +175
55/175/56
Value
360
331
±20
150
90
90
90
PG-TO252-3-11
IPD90N06S4-04
3.8
60
90
2009-07-01
Unit
A
mJ
A
V
W
°C
V
m
A

Related parts for IPD90N06S4-04

IPD90N06S4-04 Summary of contents

Page 1

... IEC climatic category; DIN IEC 68-1 Rev. 1.2 Product Summary Marking 4N0604 Symbol Conditions I T =25° =100° =25°C D,pulse =45A =25°C tot stg - - page 1 IPD90N06S4-04 DS DS(on),max D PG-TO252-3-11 Value =10V =10V 360 331 90 ±20 150 -55 ... +175 55/175/ 3 Unit °C 2009-07-01 ...

Page 2

... V V =0V 1mA (BR)DSS =90µA GS(th =60V, V =0V DSS T =25° =60V, V =0V =125° =20V, V =0V GSS =10V, I =90A DS(on page 2 IPD90N06S4-04 Values min. typ. max 1 2.0 3.0 4 100 - - 100 - 3.2 3.8 2009-07-01 Unit K/W V µ ...

Page 3

... V plateau =25° S,pulse V =0V, I =90A =25° =30V, I =50A /dt =100A/µ 1.0K/W the chip is able to carry 152A at 25°C. thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPD90N06S4-04 Values min. typ. max. - 7980 10400 pF = 1960 2540 - =10V 5 0.6 0.95 - ...

Page 4

... parameter 1000 100 Rev. 1.2 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPD90N06S4- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2009-07-01 ...

Page 5

... V GS Rev. 1.2 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 6 5 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 6 5.5 5 4 °C -55 °C 2 [V] page 5 IPD90N06S4- ° 6 5 160 240 I [ -60 - 100 T [° 7 320 140 180 2009-07-01 ...

Page 6

... Rev. 1.2 10 Typ. capacitances C = f(V 10 900 µ 100 140 180 12 Avalanche characteristics parameter: T 100 10 25 °C 25 °C 1 0.8 0 1.2 1.2 1.4 1.4 [V] [V] page 6 IPD90N06S4- MHz [ j(start) 25 °C 100 °C 150 °C 0 [µs] AV Ciss Coss Crss 25 30 100 1000 2009-07-01 ...

Page 7

... Avalanche energy 400 300 200 100 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.2 14 Drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th 100 [nC] page 7 IPD90N06S4- -55 - 105 T [° 145 Q gate 2009-07-01 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 page 8 IPD90N06S4-04 2009-07-01 ...

Page 9

... Revision History Version Revision 1.1 Revision 1.2 Rev. 1.2 Date 12.09.2008 01.07.2009 page 9 IPD90N06S4-04 Changes Update of RthJC and related parameters from 0.8K/W to 1.0K/W Update of SOA diagram 2009-07-01 ...

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