IPP100N08N3 G Infineon Technologies, IPP100N08N3 G Datasheet

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IPP100N08N3 G

Manufacturer Part Number
IPP100N08N3 G
Description
MOSFET N-CH 80V 70A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB097N08N3_G.pdf (11 pages)

Specifications of IPP100N08N3 G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 mOhm @ 46A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
3.5V @ 46µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
2410pF @ 40V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000474188
Features
Maximum ratings,
Parameter
Type
Package
Marking
™
3 Power-Transistor
T
R
Symbol Conditions
I
I
E
V
P
T T
T
T
T
I
T
R
Product Summary
V
R
I
IPP100N08N3 G IPI100N08N3 G
Value
IPB097N08N3 G
Unit

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IPP100N08N3 G Summary of contents

Page 1

... Power-Transistor Features R Type Package Marking Maximum ratings, T Parameter IPP100N08N3 G IPI100N08N3 G Product Summary Symbol Conditions IPB097N08N3 G Value Unit ...

Page 2

... Parameter Thermal characteristics Electrical characteristics, T Static characteristics IPP100N08N3 G IPI100N08N3 G Symbol Conditions IPB097N08N3 G Values Unit min. typ. max. ...

Page 3

... Parameter Dynamic characteristics Reverse Diode IPP100N08N3 G IPI100N08N3 G Symbol Conditions IPB097N08N3 G Values Unit min. typ. max. ...

Page 4

... Power dissipation P T 120 100 T [° Safe operating area [ Drain current 150 200 0 4 Max. transient thermal impedance IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G 50 100 150 T [° [s] p 200 0 10 ...

Page 5

... Typ. output characteristics 280 240 200 160 120 [ Typ. transfer characteristics 180 150 120 [ Typ. drain-source on resistance Typ. forward transconductance 120 IPP100N08N3 G IPI100N08N3 G IPB097N08N3 120 160 200 240 I [ 120 160 I [A] D 280 200 ...

Page 6

... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 100 140 180 -60 12 Forward characteristics of reverse diode IPP100N08N3 G IPI100N08N3 G IPB097N08N3 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...

Page 7

... Avalanche characteristics 100 [µ Drain-source breakdown voltage -60 - [° Typ. gate charge 100 1000 0 16 Gate charge waveforms 100 140 180 IPP100N08N3 G IPI100N08N3 G IPB097N08N3 [nC] gate ate ...

Page 8

... PG-TO263-3 (D²-Pak) IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G ...

Page 9

... PG-TO262-3 (I²-Pak) IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G ...

Page 10

... PG-TO220-3 IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G ...

Page 11

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G ...

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