IPP100N08N3 G Infineon Technologies, IPP100N08N3 G Datasheet - Page 5

• Manufacturer Part Number: IPP100N08N3 G
• Description: MOSFET N-CH 80V 70A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100N08N3 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 46A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 3.5V @ 46µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 2410pF @ 40V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000474188

5 Typ. output characteristics
I
7 Typ. transfer characteristics
I
V
280
240
200
160
120
V
180
150
120
80
40
90
60
30
0
0
0
0
T
V
V
T
1
I R
2
2
V
V
GS
DS
4
[V]
[V]
3
6
4
5
8
6 Typ. drain-source on resistance
R
8 Typ. forward transconductance
g
120
I
20
16
12
80
40
0
8
4
0
0
0
I
T
V
T
40
IPP100N08N3 G IPI100N08N3 G
40
80
80
120
I
I
D
D
[A]
[A]
160
120
IPB097N08N3 G
200
160
240
280
200