IPP100N08N3 G Infineon Technologies, IPP100N08N3 G Datasheet - Page 7

• Manufacturer Part Number: IPP100N08N3 G
• Description: MOSFET N-CH 80V 70A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100N08N3 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 46A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 3.5V @ 46µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 2410pF @ 40V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000474188

13 Avalanche characteristics
I
15 Drain-source breakdown voltage
V
100
t
10
90
85
80
75
70
65
60
1
0.1
-60
R
T
T
I
-20
1
20
t
T
AV
j
60
10
[°C]
[µs]
100
100
140
1000
180
14 Typ. gate charge
V
16 Gate charge waveforms
Q
V
12
10
V
Q
8
6
4
2
0
0
V
I
Q
IPP100N08N3 G IPI100N08N3 G
10
Q
Q
gate
g
Q
[nC]
Q
IPB097N08N3 G
20
Q
g ate
30