BSC030P03NS3 G Infineon Technologies, BSC030P03NS3 G Datasheet - Page 2
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BSC030P03NS3 G
Manufacturer Part Number
BSC030P03NS3 G
Description
MOSFET P-CH 30V 100A TDSON-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSC030P03NS3_G.pdf
(9 pages)
Specifications of BSC030P03NS3 G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.9V @ 345µA
Gate Charge (qg) @ Vgs
186nC @ 10V
Input Capacitance (ciss) @ Vds
14000pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.003 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
25.4 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Package
SuperSO8
Vds (max)
-30.0 V
Rds (on) (max) (@10v)
3.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000442470