IPD320N20N3 G Infineon Technologies, IPD320N20N3 G Datasheet

IPD320N20N3 G

Manufacturer Part Number

IPD320N20N3 G

Description

MOSFET N-CH 200V 34A TO252-3

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Datasheet

1.IPD320N20N3_G.pdf (9 pages)

Specifications of IPD320N20N3 G

Package / Case

DPak, TO-252 (5 leads + tab)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

32 mOhm @ 34A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

34A

Vgs(th) (max) @ Id

4V @ 90µA

Gate Charge (qg) @ Vgs

29nC @ 10V

Input Capacitance (ciss) @ Vds

2350pF @ 100V

Power - Max

136W

Mounting Type

Surface Mount

Gate Charge Qg

22 nC

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

32 mOhms

Forward Transconductance Gfs (max / Min)

55 S, 28 S

Drain-source Breakdown Voltage

200 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

34 A

Power Dissipation

136 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

IPD320N20N3 G
IPD320N20N3 GTR

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Features

Maximum ratings,

Parameter

Type

Package

Marking

3 Power-Transistor

Symbol Conditions

T T

Product Summary

Value

IPD320N20N3 G

Unit

Related parts for IPD320N20N3 G

IPD320N20N3 G Summary of contents

Page 1

... TM 3 Power-Transistor Features R R Type Package Marking Maximum ratings, T Parameter Product Summary Symbol Conditions IPD320N20N3 G Value Unit ...

Page 2

... Parameter Thermal characteristics Electrical characteristics, T Static characteristics Symbol Conditions IPD320N20N3 G Values Unit min. typ. max. ...

Page 3

... Parameter Dynamic characteristics Reverse Diode Symbol Conditions 17A IPD320N20N3 G Values Unit min. typ. max. ...

Page 4

... Power dissipation P T 160 140 120 100 100 T [° Safe operating area [ Drain current 150 200 0 4 Max. transient thermal impedance IPD320N20N3 G 50 100 150 200 T [° [ ...

Page 5

... Typ. output characteristics [ Typ. transfer characteristics [ Typ. drain-source on resistance Typ. forward transconductance IPD320N20N3 [ [ ...

... Drain-source on-state resistance 100 -60 - [° Typ. capacitances [ Typ. gate threshold voltage 3.5 3 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode 120 160 IPD320N20N3 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...

Page 7

... Avalanche characteristics 100 [µ Drain-source breakdown voltage 230 220 210 200 190 180 -60 - [° Typ. gate charge 100 1000 0 16 Gate charge waveforms 100 140 180 IPD320N20N3 [nC] gate ate ...

Page 8

... PG-TO252-3: Outline IPD320N20N3 G ...

Page 9

... IPD320N20N3 G ...

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