IPP100N06S2-05 Infineon Technologies, IPP100N06S2-05 Datasheet - Page 7

• Manufacturer Part Number: IPP100N06S2-05
• Description: MOSFET N-CH 55V 100A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100N06S2-05

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 5110pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000218872

Rev. 1.0
13 Typical avalanche energy
E
parameter: I
15 Typ. drain-source breakdown voltage
V
AS
BR(DSS)
1400
1200
1000
= f(T
800
600
400
200
66
64
62
60
58
56
54
52
50
48
46
0
-60
= f(T
0
j
)
60 A
80 A
50 A
D
j
); I
-20
D
= 1 mA
50
20
T
T
j
100
j
60
[°C]
[°C]
100
150
140
180
200
page 7
14 Typ. gate charge
V
16 Gate charge waveforms
GS
V
V
= f(Q
GS
GS
12
10
8
6
4
2
0
0
gate
Q
Q
gs
gs
); I
D
= 80 A pulsed
Q
Q
50
g
g
Q
Q
Q
gate
gd
gd
[nC]
IPB100N06S2-05
IPP100N06S2-05
100
Q
Q
11 V
gate
gate
2006-03-13
44 V
150