IPP100N06S2L-05 Infineon Technologies, IPP100N06S2L-05 Datasheet

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IPP100N06S2L-05

Manufacturer Part Number
IPP100N06S2L-05
Description
MOSFET N-CH 55V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP100N06S2L-05

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.7 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
230nC @ 10V
Input Capacitance (ciss) @ Vds
5660pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000218879
Rev. 1.0
OptiMOS
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
Type
IPB100N06S2L-05
IPP100N06S2L-05
Green package (lead free)
®
Power-Transistor
2)
4)
Package
PG-TO263-3-2
PG-TO220-3-1
j
=25 °C, unless otherwise specified
1)
2)
Symbol
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Ordering Code
SP0002-19003
SP0002-18879
stg
T
T
V
T
I
T
D
C
C
C
C
GS
= 80 A
page 1
=25 °C, V
=100 °C,
=25 °C
=25 °C
=10 V
Conditions
2)
GS
PG-TO263-3-2
Product Summary
V
R
I
Marking
PN06L05
PN06L05
D
=10 V
DS
DS(on),max
(SMD version)
-55 ... +175
Value
100
100
400
810
±20
300
PG-TO220-3-1
IPB100N06S2L-05
IPP100N06S2L-05
100
4.4
55
2006-03-13
Unit
A
mJ
V
W
°C
V
m
A

Related parts for IPP100N06S2L-05

IPP100N06S2L-05 Summary of contents

Page 1

... Ordering Code SP0002-19003 SP0002-18879 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse =25 °C tot stg page 1 IPB100N06S2L-05 IPP100N06S2L-05 DS (SMD version) DS(on),max D PG-TO220-3-1 Marking PN06L05 PN06L05 Value =10 V 100 100 400 810 ±20 300 -55 ... +175 55 V 4.4 m 100 A Unit °C 2006-03-13 ...

Page 2

... GS(th = DSS T =25 ° = =125 ° = GSS =4 =80 A DS( SMD version =80 A DS( SMD version page 2 IPB100N06S2L-05 IPP100N06S2L-05 Values min. typ. max 0 1.2 1 100 = 100 - 4.3 5.9 - 4.0 5.6 - 3.5 4.7 - 3.2 4.4 Unit K µ mΩ 2006-03-13 ...

Page 3

... plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ 0.5 K/W the chip is able to carry 185 A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB100N06S2L-05 IPP100N06S2L-05 Values min. typ. max. - 5660 = 1330 - 360 - =4 170 - 3 0 125 ...

Page 4

... V DS Rev. 1.0 2 Drain current 120 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µs 100 µ 100 [V] page 4 IPB100N06S2L-05 IPP100N06S2L- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2006-03-13 ...

Page 5

... V GS Rev. 1.0 6 Typ. drain-source on-state resistance DS(on) parameter 3 2 [V] 8 Typ. Forward transconductance parameter: g 300 250 200 150 100 50 -55 ° [V] page 5 IPB100N06S2L-05 IPP100N06S2L- ° [ 25° 100 150 I [ 100 120 200 2006-03-13 ...

Page 6

... Typ. gate threshold voltage V = f(T GS(th) parameter: I 2.5 2 1.5 1 0.5 0 100 140 180 12 Typical forward diode characteristicis IF = f(V SD parameter Ciss 2 10 Coss Crss [V] page 6 IPB100N06S2L-05 IPP100N06S2L- 1350 µA 270 µA -60 - 100 T [° °C 175 °C 0 0.2 0.4 0.6 0 [V] SD 140 180 1.2 1.4 2006-03-13 ...

Page 7

... T [° Typ. drain-source breakdown voltage BR(DSS -60 - [°C] j Rev. 1.0 14 Typ. gate charge V = f(Q GS gate 150 200 0 16 Gate charge waveforms 100 140 180 page 7 IPB100N06S2L-05 IPP100N06S2L- 100 A pulsed 100 150 Q [nC] gate gate gate 2006-03- 200 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPB100N06S2L-05 IPP100N06S2L-05 2006-03-13 ...

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