IPP100N06S2L-05 Infineon Technologies, IPP100N06S2L-05 Datasheet - Page 5

no-image

IPP100N06S2L-05

Manufacturer Part Number
IPP100N06S2L-05
Description
MOSFET N-CH 55V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP100N06S2L-05

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.7 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
230nC @ 10V
Input Capacitance (ciss) @ Vds
5660pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000218879

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPP100N06S2L-05
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPP100N06S2L-05
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPP100N06S2L-05
Manufacturer:
INFINEON
Quantity:
5 314
Company:
Part Number:
IPP100N06S2L-05
Quantity:
10 000
Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
300
250
200
150
100
200
180
160
140
120
100
50
80
60
40
20
0
0
DS
GS
0
1
); T
10 V
); V
GS
j
j
DS
= 25 °C
= 6V
2
4 V
2
175 °C
4
V
V
DS
GS
25 °C
3.5 V
3 V
2.5 V
[V]
[V]
6
-55 °C
3
8
page 5
10
4
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
300
250
200
150
100
16
14
12
10
50
0
8
6
4
2
0
= (I
D
); T
0
0
D
); T
j
= 25°C
fs
GS
20
j
= 25 °C
50
40
3 V
I
I
D
D
100
60
[A]
[A]
IPB100N06S2L-05
IPP100N06S2L-05
80
150
100
2006-03-13
4.5 V
3.5 V
10 V
4 V
120
200

Related parts for IPP100N06S2L-05