IPP100N08S2-07 Infineon Technologies, IPP100N08S2-07 Datasheet - Page 5

• Manufacturer Part Number: IPP100N08S2-07
• Description: MOSFET N-CH 75V 100A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100N08S2-07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.1 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0071 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000219005

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
300
250
200
150
100
200
180
160
140
120
100
50
80
60
40
20
0
0
DS
GS
0
2
); T
); V
10 V
GS
j
j
DS
= 25 °C
3
= 6V
2
175 °C
7 V
4
25 °C
4
V
V
-55 °C
DS
GS
5
6 V
5.5 V
5 V
4.5 V
[V]
[V]
6
6
8
7
page 5
10
8
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
150
125
100
18
16
14
12
10
75
50
25
8
6
4
0
= (I
D
); T
0
0
D
); T
j
= 25°C
fs
GS
IPP100N08S2-07, IPI100N08S2-07
20
j
5 V
= 25 °C
50
40
I
I
D
D
100
60
[A]
[A]
5.5 V
IPB100N08S2-07
80
150
100
2006-03-03
6 V
10 V
8 V
120
200