IPP100N04S2-04 Infineon Technologies, IPP100N04S2-04 Datasheet - Page 6

MOSFET N-CH 40V 100A TO220-3

IPP100N04S2-04

Manufacturer Part Number
IPP100N04S2-04
Description
MOSFET N-CH 40V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP100N04S2-04

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.6 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
172nC @ 10V
Input Capacitance (ciss) @ Vds
5300pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.6 m Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000219056

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPP100N04S2-04
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.0
9 Typ. Drain-source on-state resistance
R
parameter: I
11 Typ. capacitances
C = f(V
DS(ON)
10
10
10
5
4
3
2
1
-60
DS
4
3
2
= f(T
0
); V
D
j
)
GS
= 80 A; V
-20
= 0 V; f = 1 MHz
5
20
10
GS
= 10 V
T
V
j
DS
60
[°C]
15
[V]
100
20
140
25
Crss
Coss
Ciss
180
30
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
3.5
2.5
1.5
0.5
10
10
10
10
= f(T
4
3
2
1
0
3
2
1
0
SD
-60
0
)
j
); V
D
j
0.2
-20
GS
= V
0.4
175 °C
20
DS
250µA
0.6
V
T
SD
j
25 °C
60
[°C]
[V]
0.8
1250µA
IPB100N04S2-04
IPP100N04S2-04
100
1
140
2006-03-02
1.2
180
1.4

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