IPP100N04S3-03 Infineon Technologies, IPP100N04S3-03 Datasheet

MOSFET N-CH 40V 100A TO220-3

IPP100N04S3-03

Manufacturer Part Number
IPP100N04S3-03
Description
MOSFET N-CH 40V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP100N04S3-03

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.8 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
145nC @ 10V
Input Capacitance (ciss) @ Vds
9600pF @ 25V
Power - Max
214W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.3 m Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
214 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000261227

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IPP100N04S3-03
Manufacturer:
NXP
Quantity:
5 000
Price:
Rev. 1.0
OptiMOS
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPB100N04S3-03
IPI100N04S3-03
IPP100N04S3-03
®
-T Power-Transistor
2)
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
j
=25 °C, unless otherwise specified
Symbol
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
3PN0403
3PN0403
3PN0403
stg
T
T
T
I
T
D
C
C
C
C
=80 A
page 1
=25°C, V
=100°C, V
=25 °C
=25 °C
Conditions
PG-TO263-3-2
GS
GS
Product Summary
V
R
I
=10V
D
DS
DS(on)
=10V
IPI100N04S3-03, IPP100N04S3-03
1)
(SMD Version)
2)
PG-TO262-3-1
-55 ... +175
55/175/56
Value
100
100
400
898
±20
214
IPB100N04S3-03
PG-TO220-3-1
100
2.5
40
2007-05-03
Unit
A
mJ
V
W
°C
V
m
A

Related parts for IPP100N04S3-03

IPP100N04S3-03 Summary of contents

Page 1

... Parameter Continuous drain current 2) Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.0 IPI100N04S3-03, IPP100N04S3-03 Product Summary (SMD Version) DS(on PG-TO263-3-2 Marking 3PN0403 ...

Page 2

... (BR)DSS =150 µA GS(th = DSS T =25 ° = =125 ° = GSS = =80 A DS( SMD version page 2 IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 Values min. typ. max 0 2.1 3.0 4 100 = 100 - 2.2 2.8 - 1.9 2.5 Unit K µA nA mΩ 2007-05-03 ...

Page 3

... C I S,pulse = =25 ° = =50A /dt =100 A/µ 0.7 K/W the chip is able to carry 218 A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 Values min. typ. max. - 7400 9600 = 2000 2600 - 310 - = 110 - 5.2 ...

Page 4

... V DS Rev. 1.0 2 Drain current 120 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-05-03 ...

Page 5

... V GS Rev. 1.0 6 Typ. drain-source on-state resistance DS(on) parameter 6 5 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 3.5 2.5 1.5 -55 ° [V] page 5 IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3- ° 6 100 200 300 I [ -60 - 100 T [° 400 140 180 2007-05-03 ...

Page 6

... V SD Rev. 1.0 10 Typ. capacitances 1500µ 100 140 180 12 Typ. avalanche characteristics I = f(t AS parameter: T 1000 100 25 ° 0.8 1 1.2 1.4 [V] page 6 IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3- MHz [ j(start) 100°C 150° 100 t [µs] AV Ciss Coss Crss 25 30 25°C 1000 2007-05-03 ...

Page 7

... A 1000 80 A 500 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.0 14 Drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms 100 120 [nC] page 7 IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3- -60 - 100 T [° 140 180 gate gate 2007-05-03 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 IPI100N04S3-03, IPP100N04S3-03 page 8 IPB100N04S3-03 2007-05-03 ...

Page 9

... Revision History Version Rev. 1.0 IPI100N04S3-03, IPP100N04S3-03 Date page 9 IPB100N04S3-03 Changes 2007-05-03 ...

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