IPP100N04S3-03 Infineon Technologies, IPP100N04S3-03 Datasheet - Page 5

• Manufacturer Part Number: IPP100N04S3-03
• Description: MOSFET N-CH 40V 100A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100N04S3-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 145nC @ 10V
• Input Capacitance (ciss) @ Vds: 9600pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.3 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000261227

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
600
500
400
300
200
100
600
500
400
300
200
100
0
0
DS
GS
2
0
); T
); V
GS
j
j
DS
10 V
= 25 °C
3
= 6V
2
4
175 °C
V
V
25 °C
GS
DS
5
[V]
[V]
4
-55 °C
6
7
7 V
6
6 V
5.5 V
6.5 V
5 V
page 5
8
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
14
12
10
8
6
4
2
0
3.5
2.5
1.5
= (I
= f(T
3
2
1
0
-60
D
5 V
); T
j
); I
GS
IPI100N04S3-03, IPP100N04S3-03
j
D
-20
= 25 °C
= 80 A; V
5.5 V
100
20
GS
6 V
I
T
D
200
j
= 10 V
[A]
60
[°C]
IPB100N04S3-03
100
6.5 V
300
140
2007-05-03
10 V
7 V
400
180