IPW90R340C3 Infineon Technologies, IPW90R340C3 Datasheet - Page 6

• Manufacturer Part Number: IPW90R340C3
• Description: MOSFET N-CH 900V 15A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPW90R340C3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 3.5V @ 1mA
• Gate Charge (qg) @ Vgs: 94nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 100V
• Power - Max: 208W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 15A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 340mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.34 Ohms
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 208 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000411306

Rev. 1.0
9 Typ. gate charge
V
parameter: V
11 Avalanche energy
E
GS
AS
=f(T
=f(Q
700
600
500
400
300
200
100
10
8
6
4
2
0
0
25
j
0
); I
gate
D
); I
=3.1A; V
DD
D
=9.2 A pulsed
20
50
DD
=50 V
40
75
Q
T
gate
j
[°C]
[nC]
400 V
100
60
720 V
125
80
100
150
page 6
10 Forward characteristics of reverse diode
I
parameter: T
12 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
1050
1000
950
900
850
800
10
10
10
10
SD
-1
2
1
0
-60
=f(T
)
0
j
); I
J
-20
D
=0.25 mA
0.5
150 °C
20
25 °C
V
T
SD
j
60
[°C]
1
[V]
25 °C, 98%
100
IPW90R340C3
150 °C, 98%
1.5
140
2008-07-29
180
2