IRF634S Vishay, IRF634S Datasheet

MOSFET N-CH 250V 8.1A D2PAK

IRF634S

Manufacturer Part Number
IRF634S
Description
MOSFET N-CH 250V 8.1A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF634S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
450 mOhm @ 5.1A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
8.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
41nC @ 10V
Input Capacitance (ciss) @ Vds
770pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF634S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF634S
Manufacturer:
IR
Quantity:
50
Part Number:
IRF634S
Manufacturer:
FAIRCHILD
Quantity:
5 888
Part Number:
IRF634STRL
Manufacturer:
EPSON
Quantity:
95
Part Number:
IRF634STRL
Manufacturer:
IR
Quantity:
20 000
Note
a. See device orientation
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91035
S-81241-Rev. A, 07-Jul-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
DS
DS(on)
g
gs
gd
(Max.) (nC)
(nC)
(nC)
(V)
(Ω)
K
SMD-220
a
D
a
G
S
a
b
V
GS
e
= 10 V
G
N-Channel MOSFET
e
Single
250
6.5
41
22
SMD-220
IRF634SPbF
SiHF634S-E3
IRF634S
SiHF634S
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.45
GS
at 10 V
T
T
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The SMD-220 is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The SMD-220 is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application.
SYMBOL
V
V
E
E
I
I
P
device
I
DM
AR
DS
GS
AS
AR
D
D
SMD-220
IRF634STRRPbF
SiHF634STR-E3
-
-
IRF634S, SiHF634S
design,
LIMIT
0.025
± 20
0.59
250
300
8.1
5.1
8.1
7.4
3.1
32
74
low
a
a
Vishay Siliconix
on-resistance
www.vishay.com
UNIT
W/°C
RoHS*
COMPLIANT
mJ
mJ
W
V
A
A
Available
and
1

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IRF634S Summary of contents

Page 1

... typical surface mount application. SMD-220 IRF634SPbF SiHF634S-E3 IRF634S SiHF634S = 25 °C, unless otherwise noted ° 100 ° ° °C A IRF634S, SiHF634S Vishay Siliconix device design, low on-resistance SMD-220 a IRF634STRRPbF a SiHF634STR- SYMBOL LIMIT V 250 DS V ± 8 5.1 ...

Page 2

... IRF634S, SiHF634S Vishay Siliconix ABSOLUTE MAXIMUM RATINGS T PARAMETER c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11 starting ° 7.3 mH ≤ 8.1 A, dI/dt ≤ 120 A/µs, V ≤ ...

Page 3

... MOSFET symbol I S showing the integral reverse junction diode ° 8 ° 5.6 A, dI/dt = 100 A/µ Intrinsic turn-on time is negligible (turn-on is dominated Fig Typical Output Characteristics °C C IRF634S, SiHF634S Vishay Siliconix MIN. TYP. MAX 8 2 220 440 b - 1.2 2.4 and 150 °C C www ...

Page 4

... IRF634S, SiHF634S Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 4 Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91035 S-81241-Rev. A, 07-Jul-08 ...

Page 5

... Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91035 S-81241-Rev. A, 07-Jul-08 IRF634S, SiHF634S Vishay Siliconix Fig Maximum Drain Current vs. Case Temperature D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF634S, SiHF634S Vishay Siliconix Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Document Number: 91035 ...

Page 7

... D.U.T. V waveform DS Diode recovery dV/dt Body diode forward drop Inductor current Ripple ≤ for logic level and 3 V drive devices GS Fig For N-Channel IRF634S, SiHF634S Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µF + D.U. ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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