IRF710S Vishay, IRF710S Datasheet - Page 4

• Manufacturer Part Number: IRF710S
• Description: MOSFET N-CH 400V 2A D2PAK
• Manufacturer: Vishay

Specifications of IRF710S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF710S

IRF710S, SiHF710S
Vishay Siliconix
www.vishay.com
4
91042_05
91042_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
400
300
200
100
20
16
12
0
8
4
0
10
0
I
0
D
= 2.0 A
V
DS ,
2
Q
G
Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
DS
4
= 80 V
V
V
C
C
C
DS
GS
iss
rss
oss
= 200 V
6
= 0 V, f = 1 MHz
= C
= C
= C
C
C
C
iss
oss
rss
10
gs
V
gd
ds
DS
1
+ C
+ C
= 320 V
8
gd
gd
For test circuit
see figure 13
, C
ds
10
Shorted
12
91042_07
91042_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
-1
0
1
2
5
2
5
2
5
2
0.4
Fig. 8 - Maximum Safe Operating Area
1
150
2
°
V
V
C
SD
DS
0.6
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
5
10
T
T
Single Pulse
0.8
C
J
25
by R
= 150 °C
= 25 °C
2
°
C
DS(on)
5
1.0
S-83000-Rev. A, 19-Jan-09
Document Number: 91042
10
2
2
1.2
V
GS
= 0 V
1
100
10
5
ms
ms
10
1.4
µs
3