IRF710S Vishay, IRF710S Datasheet - Page 6

• Manufacturer Part Number: IRF710S
• Description: MOSFET N-CH 400V 2A D2PAK
• Manufacturer: Vishay

Specifications of IRF710S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF710S

IRF710S, SiHF710S
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
10 V
Fig. 13a - Basic Gate Charge Waveform
V
AS
G
R
10 V
G
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
91042_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
150
300
250
200
100
50
0
25
V
DD
Starting T
= 50 V
+
-
V
50
DD
J
, Junction Temperature (°C)
75
100
Top
Bottom
125
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
12 V
0.89 A
1.3 A
2.0 A
DS
V
Fig. 13b - Gate Charge Test Circuit
I
GS
D
Same type as D.U.T.
Current regulator
150
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S-83000-Rev. A, 19-Jan-09
Document Number: 91042
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS