2N7000 Diodes Inc, 2N7000 Datasheet
2N7000
Manufacturer Part Number
2N7000
Description
MOSFET N-CH 60V 200MA TO92-3
Manufacturer
Diodes Inc
Datasheet
1.2N7000.pdf
(1 pages)
Specifications of 2N7000
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
3V @ 1mA
Input Capacitance (ciss) @ Vds
60pF @ 25V
Power - Max
400mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Gate Charge (qg) @ Vgs
-
Other names
2N7000DITB
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N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2– NOVEMBER 94
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
PARAMETER
Collector-Emitter Voltage
Continuous Drain Current
Pulsed Drain Current
Gate Source Vootage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current(1)
Static Drain-Source On-State
Voltage (1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2) C
Turn-On Time (2)(3)
Turn-Off Time (2)(3)
amb
=25°C
SYMBOL MIN.
BV
V
I
I
I
V
R
g
C
C
t
t
GSS
DSS
D(on)
(on)
(off)
fs
GS(th)
DS(on)
DS(on)
iss
oss
rss
DSS
60
0.8
75
100
amb
3-12
I
SYMBOL
V
I
V
P
T
D
DM
tot
j
= 25°C unless otherwise stated)
CES
GS
:T
MAX. UNIT CONDITIONS.
3.0
10
1
1
2.5
0.4
5
60
25
5
10
10
stg
V
V
nA
mA
mA
V
V
mS
pF
pF
pF
ns
ns
A
I
ID=1mA, V
V
V
V
V
V
V
V
V
V
V
R
D
-55 to +150
GS
DS
DS
DS
GS
GS
GS
DS
DS
DD
g
=10 A, V
=25 , R
VALUE
= 15V, V
=48V, V
=48V, V
=10V, V
=10V,I
=4.5V,I
=10V,I
=10V,I
=25V, V
400
15V, I
0.2
0.5
60
40
D
D
D
2N7000
L
D
GS
=200mA
DS
=500mA
=500mA
=25
GS
GS
GS
GS
D
=75mA
=500mA
S
=0V
= V
DS
=0
=0V, T=125°C
=4.5V
=0V, f=1MHz
G
D
=0V
TO92
GS
UNIT
mW
°C
V
A
A
V
(2)
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