IRF630S Vishay, IRF630S Datasheet - Page 5
![MOSFET N-CH 200V 9A D2PAK](/photos/5/29/52982/vishay-d2pak_sml.jpg)
IRF630S
Manufacturer Part Number
IRF630S
Description
MOSFET N-CH 200V 9A D2PAK
Manufacturer
Vishay
Specifications of IRF630S
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 5.4A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
800pF @ 25V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF630S
Manufacturer:
IR
Quantity:
32 050
Company:
Part Number:
IRF630STRR
Manufacturer:
IR
Quantity:
32 000
Part Number:
IRF630STRR
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.irf.com
12
0.01
9
6
3
0
0.1
0.00001
10
12
25
1
9
6
3
0
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
50
T , Case Temperature ( C)
C
T , Case Temperature ( C)
C
75
75
(THERMAL RESPONSE)
0.0001
100
SINGLE PULSE
100
125
125
°
150
°
t , Rectangular Pulse Duration (sec)
1
150
0.001
175
175
V
V
90%
90%
10%
10%
V
V
0.01
DS
DS
GS
GS
1. Duty factor D = t / t
2. Peak T = P
t
t
Notes:
d(on)
d(on)
≤ 0.1 %
≤ 0.1 %
≤ 1
≤ 1
t
t
IRF630N/S/L
r
r
J
DM
x Z
1
0.1
thJC
P
2
DM
+ T
t
t
d(off)
d(off)
C
t
1
t
t
t
2
f
f
+
-
5
1