IRF614STRR Vishay, IRF614STRR Datasheet - Page 4

• Manufacturer Part Number: IRF614STRR
• Description: MOSFET N-CH 250V 2.7A D2PAK
• Manufacturer: Vishay

Specifications of IRF614STRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF614S, SiHF614S
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
91026_05
91026_06
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
300
250
200
150
100
50
20
16
12
0
8
4
0
10
0
0
I
D
= 2.7 A
V
DS ,
Q
G
2
Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
DS
= 50 V
V
V
C
C
C
DS
GS
iss
rss
oss
= 125 V
4
= C
= 0 V, f = 1 MHz
= C
= C
10
gs
gd
ds
V
1
+ C
DS
+ C
C
C
= 200 V
gd
C
rss
gd
oss
iss
For test circuit
see figure 13
, C
6
ds
Shorted
8
91026_07
91026_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
1
0
2
1
5
2
5
2
5
2
0.5
1
Fig. 8 - Maximum Safe Operating Area
150
2
°
V
V
C
SD
DS
0.7
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
5
10
T
T
Single Pulse
0.9
25
C
J
by R
= 150 °C
= 25 °C
2
°
C
DS(on)
5
1.1
S-82997-Rev. A, 12-Jan-09
Document Number: 91026
10
2
2
1.3
V
100
1
10
GS
ms
ms
= 0 V
5
µs
1.5
10
3