RFD8P05SM Fairchild Semiconductor, RFD8P05SM Datasheet

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RFD8P05SM

Manufacturer Part Number
RFD8P05SM
Description
MOSFET P-CH 50V 8A TO-252AA
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of RFD8P05SM

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 20V
Power - Max
48W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
©2002 Fairchild Semiconductor Corporation
8A, 50V, 0.300 Ohm, P-Channel Power
MOSFETs
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09832.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.,
RFD8P05SM9A.
Packaging
RFD8P05
RFD8P05SM
RFP8P05
PART NUMBER
DRAIN (FLANGE)
TO-251AA
TO-252AA
TO-220AB
JEDEC TO-220AB
PACKAGE
Data Sheet
D8P05
D8P05
RFP8P05
SOURCE
DRAIN
BRAND
GATE
SOURCE
GATE
JEDEC TO-252AA
RFD8P05, RFD8P05SM, RFP8P05
DRAIN (FLANGE)
Features
• 8A, 50V
• r
• UIS SOA Rating Curve
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
Symbol
- TB334 “Guidelines for Soldering Surface Mount
DS(ON)
Components to PC Boards”
January 2002
= 0.300 Ω
DRAIN (FLANGE)
JEDEC TO-251AA
G
D
S
RFD8P05, RFD8P05SM, RFP8P05 Rev. B
SOURCE
DRAIN
GATE

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RFD8P05SM Summary of contents

Page 1

... High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” BRAND Symbol D8P05 D8P05 RFP8P05 SOURCE DRAIN GATE JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE = 0.300 Ω JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) RFD8P05, RFD8P05SM, RFP8P05 Rev. B ...

Page 2

... D -20 DM ± 0.27 See Figure -55 to 175 J STG 300 L 260 pkg MIN TYP - 150 C - DSS 9.1 Ω 6.25 Ω Ω, = -40V 8A -0.3mA - - - - MIN TYP - - - - RFD8P05, RFD8P05SM, RFP8P05 Rev. B UNITS MAX UNITS - - µ µ ± 100 - nA Ω - 0.300 - 100 3.125 C 100 ...

Page 3

... RATED DSS ≠ (L/R) ln [(I *R) / (1.3 RATED DSS I DM STARTING T STARTING 0 TIME IN AVALANCHE (ms) AV PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V = 15V GATE TO SOURCE VOLTAGE (V) GS FIGURE 6. TRANSFER CHARACTERISTICS RFD8P05, RFD8P05SM, RFP8P05 Rev. B 150 175 150 100 175 C -12 -15 ...

Page 4

... I = -250µ 1.25 1.00 0.75 0.50 0. 100 T , JUNCTION TEMPERATURE ( J JUNCTION TEMPERATURE 1000 800 600 C ISS 400 C 200 C RSS -10 - DRAIN TO SOURCE VOLTAGE ( DSS - G(REF) G(ACT) RFD8P05, RFD8P05SM, RFP8P05 Rev. B 150 200 0V 1MHz ISS RSS GD ≈ OSS DS GS OSS -20 -25 ...

Page 5

... FIGURE 16. GATE CHARGE TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation DUT I AS 0.01Ω FIGURE 15. RESISTIVE SWITCHING WAVEFORMS - DUT g(REF DSS FIGURE 13. UNCLAMPED ENERGY WAVEFORMS d(ON 10% 90% 10% 50% PULSE WIDTH Q g(TH - g(-5) Q g(TOT) FIGURE 17. GATE CHARGE WAVEFORMS RFD8P05, RFD8P05SM, RFP8P05 Rev OFF d(OFF 10% 90% 50% 90 -10V GS ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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