FDJ129P Fairchild Semiconductor, FDJ129P Datasheet - Page 3

• Manufacturer Part Number: FDJ129P
• Description: MOSFET P-CH 20V 4.2A SC75-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDJ129P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 4.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 780pF @ 10V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: SC75-6 FLMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDJ129PTR; FDJ129P_NL; FDJ129P_NLTR; FDJ129P_NLTR

Typical Characteristics
16
12
12
1.4
1.3
1.2
1.1
0.9
0.8
0.7
8
4
0
9
6
3
0
1
0.5
-50
0
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
V
Figure 3. On-Resistance Variation
V
DS
GS
I
D
GS
=-4.5V
= -5V
= -4.2A
-25
= -4.5V
1
-V
-V
DS
GS
1
T
withTemperature.
0
J
-3.5V
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
25
1.5
-3.0V
50
2
2
75
T
A
= -55
-2.5V
o
100
C)
o
3
C
2.5
125
-2.0V
125
o
C
25
o
C
150
3
4
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.22
0.18
0.14
0.06
0.02
0.01
100
0.1
0.1
10
1.8
1.6
1.4
1.2
0.8
1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
1
0
0
V
V
Drain Current and Gate Voltage.
GS
GS
= 0V
=-2.5V
0.2
Gate-to-Source Voltage.
-V
T
SD
A
-V
= 25
, BODY DIODE FORWARD VOLTAGE (V)
2
GS
4
, GATE TO SOURCE VOLTAGE (V)
o
C
T
0.4
-I
A
D
-3.0V
, DRAIN CURRENT (A)
= 125
T
A
o
C
= 125
-3.5V
0.6
3
8
25
o
C
o
C
-4.0V
-55
0.8
o
C
12
4
I
FDJ129P Rev G (W)
D
-4.5V
1
= -2.1A
16
1.2
5