FDJ129P Fairchild Semiconductor, FDJ129P Datasheet - Page 4

• Manufacturer Part Number: FDJ129P
• Description: MOSFET P-CH 20V 4.2A SC75-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDJ129P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 4.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 780pF @ 10V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: SC75-6 FLMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDJ129PTR; FDJ129P_NL; FDJ129P_NLTR; FDJ129P_NLTR

Typical Characteristics
0.01
100
0.1
10
5
4
3
2
1
0
1
Figure 9. Maximum Safe Operating Area.
0.1
0
Figure 7. Gate Charge Characteristics.
0.01
I
D
SINGLE PULSE
R
0.1
R
= -4.2A
θJA
0.0001
DS(ON)
V
1
T
GS
A
= 110
= 25
= -4.5V
LIMIT
D = 0.5
1
o
o
C/W
C
0.
0.1
0.0
5
0.0
0.01
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
Q
1
g
, GATE CHARGE (nC)
0.001
2
DC
10s
1s
100ms
Figure 11. Transient Thermal Response Curve.
10ms
V
3
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
DS
1ms
100µs
= -5V
10
0.01
4
-15V
-10V
100
5
0.1
t
1
, TIME (sec)
800
600
400
200
10
8
6
4
2
0
0
0.01
0
Figure 8. Capacitance Characteristics.
C
RSS
Figure 10. Single Pulse Maximum
1
C
0.1
OSS
-V
5
DS
Power Dissipation.
, DRAIN TO SOURCE VOLTAGE (V)
10
1
C
t
1
ISS
, TIME (sec)
10
P(pk)
Duty Cycle, D = t
T
R
J
R
10
θJA
- T
θJA
(t) = r(t) * R
A
= 110
100
t
= P * R
1
t
2
SINGLE PULSE
15
R
θJA
o
C/W
T
100
A
θJA
= 110°C/W
FDJ129P Rev G (W)
= 25°C
f = 1 MHz
V
1
θJA
(t)
GS
/ t
2
= 0 V
1000
1000
20