FDR840P Fairchild Semiconductor, FDR840P Datasheet - Page 208
FDR840P
Manufacturer Part Number
FDR840P
Description
MOSFET P-CH 20V 10A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR840P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 10A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 4.5V
Input Capacitance (ciss) @ Vds
4481pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDR840P
Manufacturer:
FSC
Quantity:
20 000
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Discrete
Discrete IGBT (II)
SG H 20 N 120 RUF D
(Continued)
L: Logic Level
LS: Low Saturation
UF: Ultrafast
RUF: Rugged Ultrafast
P: TO-220
R: D-PAK
S: TO-220F
U: I-PAK
H: TO-3P
W: D
F: TO-3PF
L: TO-264
M: SOT-223
D, DG3: Built-in FRD
Suffix
Voltage Rating (x10)
N: N-Channel
Current Rating
Package Type
Fairchild IGBT
2
-PAK
8-15
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