NDS9430A Fairchild Semiconductor, NDS9430A Datasheet - Page 3

• Manufacturer Part Number: NDS9430A
• Description: MOSFET P-CH 20V 5.3A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9430A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
t
S
rr
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
SD
design while R
P
Typical R
D
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
t
a. 50
b. 105
c. 125
Scale 1 : 1 on letter size paper
JA
R
T
1a
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
J
J A
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
T
o
CA
A
t
C/W when mounted on a 1 in
o
o
C/W when mounted on a 0.006 in
C/W when mounted on a 0.04 in
is determined by the user's board design.
R
J C
T
J
R
T
A
CA
t
I
2
D
t
2
pad of 2oz cpper.
R
(T
DS ON
2
2
pad of 2oz cpper.
A
pad of 2oz cpper.
= 25°C unless otherwise noted)
T
J
1b
Conditions
V
V
GS
GS
= 0 V, I
= 0V, I
F
S
= -2.4 A, dI
= -2.4 A
(Note 2)
F
/dt = 100 A/µs
1c
Min
-0.85
Typ
JC
Max
is guaranteed by
-2.1
-1.2
100
NDS9430A Rev.A
Units
ns
A
V