FQI1P50TU Fairchild Semiconductor, FQI1P50TU Datasheet - Page 2

• Manufacturer Part Number: FQI1P50TU
• Description: MOSFET P-CH 500V 1.5A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI1P50TU

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10.5 Ohm @ 750mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor International
Elerical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 88mH, I
3. I
4. Pulse Test : Pulse width
5. Essentially independent of operating temperature
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
T
DSS
-1.5A, di/dt
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= -1.5A, V
200A/ s, V
DD
300 s, Duty cycle
= -50V, R
DD
Parameter
BV
G
DSS,
= 25
Starting T
2%
Starting T
T
J
C
= 25°C
= 25°C unless otherwise noted
J
= 25°C
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= -250 A, Referenced to 25°C
/ dt = 100 A/ s
= 25
= -500 V, V
= -400 V, T
= V
= -50 V, I
= -25 V, V
= -400 V, I
= 0 V, I
= -30 V, V
= 30 V, V
= -10 V, I
= -250 V, I
= -10 V
= 0 V, I
= 0 V, I
2
Test Conditions
GS
, I
D
S
S
D
= -250 A
D
= -1.5 A
= -1.5 A,
D
DS
= -250 A
GS
DS
D
D
C
= -0.75 A
GS
= -0.75 A
= -1.5 A,
= -1.5 A,
= 0 V
= 125°C
= 0 V
= 0 V,
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
-500
Min
-3.0
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1.26
Typ
270
200
8.0
6.0
9.0
2.0
5.6
0.7
40
25
27
30
11
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-
Max
-100
10.5
100
-5.0
350
-1.5
-6.0
-5.0
-10
8.0
50
30
60
65
70
14
-1
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Rev. A3, Oct 2008
Units
V/°C
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
C