IRLW630ATM Fairchild Semiconductor, IRLW630ATM Datasheet
IRLW630ATM
Specifications of IRLW630ATM
Related parts for IRLW630ATM
IRLW630ATM Summary of contents
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... Storage Temperature Range Maximum Lead Temp. for Soldering T L Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol R Junction-to-Case JC R Junction-to-Ambient JA R Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount). ©1999 Fairchild Semiconductor Corporation = 200V DS = =100 C) C (1) (2) (1) (1) ( Characteristic ...
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IRLW/I630A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R ...
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Fig 1. Output Characteristics V GS Top : 7 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3 ...
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IRLW/I630A Fig 7. Breakdown Voltage vs. Temperature ...
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Fig 12. Gate Charge Test Circuit & Waveform Current Regulator 50k 12V 200nF 300nF V GS 3mA R 1 Current Sampling ( Resistor Fig 13. Resistive Switching Test Circuit & Waveforms V out DUT ...
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IRLW/I630A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I Driver Driver ) DUT ) DUT ) + V DS ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...