FQAF16N25 Fairchild Semiconductor, FQAF16N25 Datasheet
FQAF16N25
Manufacturer Part Number
FQAF16N25
Description
MOSFET N-CH 250V 12.4A TO-3PF
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQAF16N25.pdf
(8 pages)
Specifications of FQAF16N25
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 6.2A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
12.4A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
85W
Mounting Type
Through Hole
Package / Case
TO-3PF-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
12.4 A
Power Dissipation
85 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQAF16N25
Manufacturer:
FAIRCHILD
Quantity:
12 500
Company:
Part Number:
FQAF16N25C
Manufacturer:
FAIRCHILD
Quantity:
12 500
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QFET
QFET
QFET
QFET
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FQAF16N25 Summary of contents
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