FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 144

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Schottky Diodes and Rectifiers (Continued)
FYAF3004DN
FYAF3045DN
TO-3PF
Products
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Function
Configuration
Dual & Common
Dual & Common
Cathode
Cathode
I
300
300
(A)
FSM
2-139
(°C/W)
R
θJA
–
–
Discrete Power Products –
V
(V)
RRM
40
45
I
F (AV)
(A)
30
30
V
Diodes and Rectifiers
FM
0.55
0.55
(V)
Max
1000
1000
(µA) @V
I
RM
Max
40
45
R
(V)