FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 17
FQI12N60CTU
Manufacturer Part Number
FQI12N60CTU
Description
MOSFET N-CH 600V 12A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI12N60CTU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
2290pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQI12N60CTU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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TSSOP-8
FDW2501NZ
FDW2501N
FDW2503NZ
FDW2503N
FDW2510NZ
FDW9926A
FDW2507N
FDW2507NZ
FDW2509NZ
FDW2515NZ
FDW2516NZ
FDW9926NZ
FDW2520C
FDW2521C
FDW256P
FDW2506P
FDW2502P
FDW2504P
FDW264P
FDW254P
FDW254PZ
FDW252P
FDW262P
FDW2508P
FDW258P
TSSOP-8 N-Channel
TSSOP-8 Complementary N- and P-Channel
TSSOP-8 P-Channel
Products
Min. (V)
20 | -20
20 | -20
BV
-30
-20
-20
-20
-20
-20
-20
-20
-20
-12
-12
20
20
20
20
20
20
20
20
20
20
20
20
DSS
Dual Common Drain
Dual Common Drain
Dual Common Drain
Dual Common Drain
Dual Common Drain
Dual Common Drain
Complementary
Complementary
Config.
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
0.0135
10V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.018 | 0.035
0.021 | 0.043
R
DS(ON)
0.0125
4.5V
0.018
0.018
0.021
0.024
0.032
0.019
0.019
0.028
0.032
0.022
0.035
0.043
0.012
0.012
0.047
0.018
0.011
0.02
0.02
0.03
0.02
0.01
2-12
Max (Ω) @ V
0.028 | 0.057
0.035 | 0.07
0.0145
2.5V
0.025
0.028
0.026
0.035
0.032
0.045
0.023
0.023
0.026
0.038
0.045
0.033
0.057
0.015
0.015
0.018
0.065
0.022
0.014
0.04
0.07
–
GS
Bold = New Products (introduced January 2003 or later)
=
0.0215
0.0215
1.8V
Discrete Power Products –
0.03
0.02
0.1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q
@V
g
12 | 9.7
14 | 14
Typ. (nC)
GS
8.2
6.1
5.7
9.7
12
12
20
13
28
14
95
60
13
61
12
12
20
21
60
41
26
9
9
= 5V
5.5 | 3.8
I
6 | 4.4
D
5.5
5.5
5.5
6.4
4.5
7.5
7.5
7.1
5.8
5.8
4.5
5.3
4.4
3.8
9.7
9.2
9.2
8.8
4.5
6
8
6
9
(A)
MOSFETs
P
D
1.6
1.6
1.6
1.6
1.6
1.6
1.3
1.3
1.3
1.4
1.3
1.3
1.3
1.3
1
1
1
1
1
1
1
1
1
1
1
(W)
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