FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 79

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.fairchildsemi.com
Application Specific MOSFET Drivers
FDG901D
FDC6901L
SC70-5
SuperSOT-6/TSOP-6
Products
P-Channel Slew Rate Control Driver
Integrated Driver & Load Switch
Function
Polarity
P-Channel
P-Channel
Configuration
Single Integrated
Discrete Power Products –
Single
2-74
V
Operating Voltage
DD
2.7
2.7
Min
Range
V
DD
6
6
Max
Application Specific MOSFET Drivers
I
LOAD
0.00012
(A)
3
Typ
t
rise
(µs)
124
28
Typ
t
fall
(µs)
–
–
Typ
P
D
0.15
1.6
(W)