FQI16N25CTU Fairchild Semiconductor, FQI16N25CTU Datasheet

FQI16N25CTU

Manufacturer Part Number

FQI16N25CTU

Description

MOSFET N-CH 250V 15.6A I2PAK

Manufacturer

Fairchild Semiconductor

Series

QFET™r

Datasheet

1.FQB16N25CTM.pdf (9 pages)

Specifications of FQI16N25CTU

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

270 mOhm @ 7.8A, 10V

Drain To Source Voltage (vdss)

250V

Current - Continuous Drain (id) @ 25° C

15.6A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

53.5nC @ 10V

Input Capacitance (ciss) @ Vds

1080pF @ 25V

Power - Max

3.13W

Mounting Type

Through Hole

Package / Case

I²Pak, TO-262 (3 straight leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.22 Ohms

Forward Transconductance Gfs (max / Min)

10.5 S

Drain-source Breakdown Voltage

250 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

15.6 A

Power Dissipation

3.13 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FQI16N25CTU

Manufacturer:

Fairchild Semiconductor

Quantity:

135

Current page: 1 of 9
Download datasheet (762Kb)

FQB16N25C/FQI16N25C Rev. A1

FQB16N25C/FQI16N25C

250V N-Channel MOSFET

Features

• 15.6A, 250V, R

• Low gate charge ( typical 41nC)

• Low Crss ( typical 68pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings

Thermal Characteristics

* When mounted on the minimum pad size recommended (PCB Mount)

dv/dt

DSS

GSS

θJC

θJA

, T

Symbol

STG

DS(on)

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient

Drain-Source Voltage

Drain Current

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

= 0.27 Ω @V

FQB Series

-PAK

- Continuous (T

- Pulsed

- Derate above 25°C

= 25°C)*

= 25°C)

= 10 V

Parameter

= 25°C)

= 100°C)

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficiency switching DC/DC converters, switch mode power

supplies, DC-AC converters for uninterrupted power supplies

and motor controls.

FQI Series

(Note 1)

(Note 2)

(Note 1)

(Note 3)

-PAK

FQB16N25C / FQI16N25C

-55 to +150

15.6

62.4

± 30

15.6

13.9

3.13

1.11

62.5

250

410

139

300

9.8

5.5

0.9

QFET

June 2006

www.fairchildsemi.com

Units

°C/W

W/°C

V/ns

°C

Related parts for FQI16N25CTU

FQI16N25CTU Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Ambient* θJA R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FQB16N25C/FQI16N25C Rev. A1 Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...

Page 2

... Package Marking and Ordering Information Device Marking Device FQB16N25C FQB16N25CTM FQI16N25C FQI16N25CTU Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ∆BV / DSS Breakdown Voltage Temperature Coefficient ∆ Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics V GS Top : 15.0 V 10.0 V 8 6.0 V 5.5 V 5.0 V Bottom : 4 ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area is Limited ...

Page 5

Unclamped Inductive Switching Test Circuit & Waveforms FQB16N25C/FQI16N25C Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

FQB16N25C/FQI16N25C Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

Mechanical Dimensions 9.90 ±0.10 1.27 2.54 TYP 10.00 FQB16N25C/FQI16N25C Rev -PAK 2 ±0.20 ±0.10 0.80 2.54 TYP ±0.20 7 ±0.20 4.50 +0.10 1.30 –0.05 ±0.15 0.10 ±0.20 2.40 +0.10 0.50 –0.05 ±0.20 10.00 (8.00) (4.40) (2XR0.45) ±0.10 0.80 ...

Page 8

Package Dimensions (Continued) 9.90 ±0.10 1.27 2.54 TYP 10.00 FQB16N25C/FQI16N25C Rev -PAK 2 ±0.20 ±0.10 1.47 ±0.10 0.80 2.54 TYP ±0.20 8 ±0.20 4.50 +0.10 1.30 –0.05 +0.10 0.50 ±0.20 2.40 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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