FDAF69N25 Fairchild Semiconductor, FDAF69N25 Datasheet

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FDAF69N25

Manufacturer Part Number
FDAF69N25
Description
MOSFET N-CH 250V 34A TO-3PF
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDAF69N25

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
41 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
34A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
4640pF @ 25V
Power - Max
115W
Mounting Type
Through Hole
Package / Case
TO-3PF-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDAF69N25
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2005 Fairchild Semiconductor Corporation
FDAF69N25 Rev. A
FDAF69N25
250V N-Channel MOSFET
Features
• 34A, 250V, R
• Low gate charge ( typical 77 nC)
• Low Crss ( typical 84 pF)
• Fast switching
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
V
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
DS(Avalanche)
GSS
AS
AR
D
Symbol
θJC
θCS
θJA
Symbol
T
STG
DS(on)
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Repetitive Avalanche Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Operating and Storage Temperature Range
= 0.041Ω @V
G
D
S
GS
= 10 V
Parameter
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
C
= 25°C)
FQAF Series
TO-3PF
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switching DC/DC converters and switched mode power
supplies.
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
Min.
0.24
--
--
FDAF69N25
S
D
-55 to +150
1894
21.5
0.93
11.5
250
300
136
300
±30
115
4.5
34
34
UniFET
Max.
1.08
40
--
September 2005
www.fairchildsemi.com
Unit
W/°C
V/ns
mJ
mJ
Unit
°C/W
°C/W
°C/W
°C
°C
W
V
V
A
A
A
V
A
TM

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FDAF69N25 Summary of contents

Page 1

... R Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2005 Fairchild Semiconductor Corporation FDAF69N25 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transis- GS tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- ...

Page 2

... DD G ≤ 34A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDAF69N25 Rev. A Package Reel Size TO-3PF -- T = 25°C unless otherwise noted C Conditions 250µA ...

Page 3

... GS 0.06 0. 100 I , Drain Current [A] D Figure 5. Capacitance Characteristics 9000 C 6000 oss C iss 3000 C rss Drain-Source Voltage [V] DS FDAF69N25 Rev. A Figure 2. Transfer Characteristics Notes : µ 1. 250 s Pulse Test ° Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 20V GS ° ...

Page 4

... Limited by R DS(on Notes : Single Pulse - Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FDAF69N25 Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : µ 250 A 0.5 D 0.0 100 150 200 -100 ° C] Figure 10. Maximum Drain Current 40 µ ...

Page 5

... 3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FDAF69N25 Rev. A Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & Waveforms ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDAF69N25 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Mechanical Dimensions 2.00 ±0.20 2.00 ±0.20 ±0.20 4.00 +0.20 0.75 –0.10 5.45TYP ±0.30 [5.45 ] FDAF69N25 Rev. A TO-3PF ±0.20 15.50 ø3.60 ±0.20 0.85 2.00 ±0.20 5.45TYP ±0.30 [5. ±0.20 5.50 ±0.20 3.00 (1.50) ±0.03 ±0.20 2.00 3.30 ±0.20 +0.20 0.90 –0.10 Dimensions in Millimeters ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDAF69N25 Rev. A ISOPLANAR™ PowerSaver™ LittleFET™ PowerTrench MICROCOUPLER™ QFET MicroFET™ QS™ MicroPak™ ...

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