FDPF55N06 Fairchild Semiconductor, FDPF55N06 Datasheet - Page 2

• Manufacturer Part Number: FDPF55N06
• Description: MOSFET N-CH 60V 55A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF55N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1510pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP55N06/FDPF55N06 Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.6mH, I
3. I
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
∆BV
∆T
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
d(on)
d(off)
f
DSS
GSSF
GSSR
r
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
J
DSS
≤ 55A, di/dt ≤ 200A/µs, V
FDPF55N06
DSS
FDP55N06
/
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 55A, V
DD
= 50V, R
DD
≤ BV
FDPF55N06
FDP55N06
Device
G
Parameter
DSS,
= 25 Ω, Starting T
Starting T
J
= 25°C
T
C
J
= 25°C unless otherwise noted
= 25°C
Package
TO-220F
TO-220
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 µA, Referenced to 25°C
= 25 Ω
/ dt = 100 A/µs
= 60 V, V
= 48 V, T
= V
= 25 V, I
= 25 V, V
= 48 V, I
2
= 0 V, I
= 20 V, V
= -20 V, V
= 10 V, I
= 30 V, I
= 10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
Reel Size
, I
D
S
S
D
D
D
D
D
= 250 µA
C
= 55 A
= 55 A,
GS
DS
GS
= 250 µA
DS
= 27.5 A
= 55A,
= 27.5 A
= 55 A,
= 150°C
= 0 V
= 0 V
= 0 V,
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min
2.0
60
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0.018
Typ
1160
0.05
375
130
6.5
7.5
33
60
30
70
95
30
40
55
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Quantity
Max Units
0.022
1510
-100
100
490
265
150
195
220
4.0
1.4
www.fairchildsemi.com
10
90
65
37
55
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1
50
50
V/°C
µA
µA
nA
nA
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V