IRFR224BTM_TC002 Fairchild Semiconductor, IRFR224BTM_TC002 Datasheet - Page 123
IRFR224BTM_TC002
Manufacturer Part Number
IRFR224BTM_TC002
Description
MOSFET N-CH 250V 3.8A DPAK
Manufacturer
Fairchild Semiconductor
Datasheet
1.SFU9220TU_F080.pdf
(214 pages)
Specifications of IRFR224BTM_TC002
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
450pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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JFETs (Continued)
BSR56
SOT-23 P-Channel
MMBFJ270
MMBFJ177
MMBFJ176
MMBFJ271
MMBFJ175
MMBF5460
MMBF5461
MMBF5462
SOT-323 N-Channel
FJX597JH
SOT-623F N-Channel
FJZ594J
SuperSOT N-Channel
MMBF5434
MMBFJ108
TO-92 N-Channel
FJN598J
J300
2N5555
2N5484
J210
2N5485
J110
J309
PN5434
J211
J107
2N5457
2N5486
J212
J109
J106
J310
Products
BV
(V)
40
30
30
30
30
30
40
40
40
20
20
25
25
20
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
GDS
Dissipation
Power
(mW)
250
225
225
225
225
225
225
225
225
100
100
350
350
150
350
350
350
350
350
625
625
350
350
625
625
350
350
625
625
625
P
D
Min (V)
0.75
0.5
0.8
1.5
1.8
0.3
0.5
0.5
2.5
0.5
0.5
–
–
1
–
–
–
1
4
2
4
1
3
1
3
1
1
2
2
2
Typ (V) Max (V) @ I
0.6
0.6
0.6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
GS
2.5
4.5
7.5
1.5
1.5
1.5
4.5
4.5
6.5
10
10
–
–
2
4
6
6
9
4
3
3
4
4
4
4
6
6
6
6
6
(off)
0.001
0.001
0.001
0.003
0.001
0.003
0.001
0.001
0.001
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
D
–
–
–
1
1
1
1
1
1
1
1
(µA) @ V
2-118
Discrete Power Products –
15
15
15
15
15
15
15
15
15
15
15
15
15
10
15
15
15
15
15
10
DS
–
–
–
5
5
5
5
5
5
5
(V) Min (mA) Max (mA) @V
0.15
0.15
100
200
1.5
0.1
50
30
80
15
10
12
30
15
40
24
2
2
6
7
1
2
4
6
1
2
4
7
1
8
0.35
0.35
0.35
I
15
20
25
50
60
16
30
15
10
30
20
20
40
60
DSS
–
–
–
–
–
–
–
–
–
5
9
5
5
DS
15
15
15
15
15
15
15
15
15
15
15
10
15
15
15
15
15
10
15
15
15
15
15
15
15
15
10
5
5
5
(V) Min (mS) Max (mS)
Bipolar Transistors and JFETs
6000
8000
1.5
3.5
10
–
–
–
–
1
2
–
–
–
–
–
–
–
3
4
–
–
6
–
1
4
7
–
–
8
GFS
15000
18000
12
20
12
12
18
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
4
5
6
6
7
5
8
300
150
R
(Ω)
250
125
25
18
10
12
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
8
8
6
DS
I
0.0002
0.003
0.003
D
(µA)
0.01
(off)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
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