IRFS634B_FP001 Fairchild Semiconductor, IRFS634B_FP001 Datasheet - Page 4

• Manufacturer Part Number: IRFS634B_FP001
• Description: MOSFET N-CH 250V 8.1A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of IRFS634B_FP001

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 4.05A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
Figure 9-1. Maximum Safe Operating Area
10
10
10
8
6
4
2
0
1.2
1.1
1.0
0.9
0.8
25
-100
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
Figure 10. Maximum Drain Current
-50
50
vs Case Temperature
T
V
T
vs Temperature
J
DS
C
, Junction Temperature [
, Case Temperature [ ℃ ]
Operation in This Area
is Limited by R
0
, Drain-Source Voltage [V]
※ Notes :
for IRF634B
10
1. T
2. T
3. Single Pulse
75
1
C
J
= 150
= 25
o
C
DS(on)
o
C
50
DC
100
10 ms
100
(Continued)
o
1 ms
C]
※ Notes :
10
1. V
2. I
2
100 s
125
D
G S
= 250 μ A
= 0 V
150
150
200
Figure 9-2. Maximum Safe Operating Area
10
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
-2
-100
2
1
0
10
0
Figure 8. On-Resistance Variation
-50
V
T
vs Temperature
J
DS
, Junction Temperature [
for IRFS634B
0
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
※ Notes :
10
1. T
2. T
3. Single Pulse
1
C
J
= 150
= 25
o
C
o
C
DS(on)
50
DC
100 ms
100
10 ms
o
C]
10
1 ms
2
100 s
※ Notes :
1. V
2. I
150
D
GS
= 4.05 A
= 10 V
Rev. A, November 2001
200