2N7000,126 NXP Semiconductors, 2N7000,126 Datasheet

MOSFET N-CH 60V 300MA TO-92

2N7000,126

Manufacturer Part Number
2N7000,126
Description
MOSFET N-CH 60V 300MA TO-92
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.2N7000126.pdf (13 pages)

Specifications of 2N7000,126

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
300mA
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
40pF @ 10V
Power - Max
830mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
2N7000 AMO
2N7000 AMO
934003460126
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
1.
Pin
1
2
3
TrenchMOS is a trademark of Royal Philips Electronics.
Pinning - SOT54, simplified outline and symbol
Description
drain (d)
gate (g)
source (s)
c
c
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
Product availability:
2N7000 in SOT54 (TO-92 variant).
2N7000
N-channel enhancement mode field-effect transistor
Rev. 03 — 19 May 2000
TrenchMOS™ technology
Very fast switching
Logic level compatible.
Relay driver
High speed line driver
Logic level translator.
1
technology.
Simplified outline
SOT54 (TO-92 variant)
3 2 1
03ab40
Symbol
N-channel MOSFET
g
Product specification
d
s
03ab30

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2N7000,126 Summary of contents

Page 1

N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: 2N7000 in SOT54 (TO-92 variant). 2. Features TrenchMOS™ technology Very fast switching Logic ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...

Page 3

Philips Semiconductors 120 P (%) der 100 100 ( amb P tot P = ---------------------- 100% der P tot 25 C Fig 1. Normalized total power dissipation as ...

Page 4

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to ambient th(j-a) 7.1 Transient thermal impedance Fig 4. Transient thermal impedance from junction to ambient as a function of pulse 9397 750 07153 ...

Page 5

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS I gate-source leakage current GSS ...

Page 6

Philips Semiconductors ( 0.8 0.6 0.4 0 0.4 0 Fig 5. Output characteristics: drain current as a function of drain-source ...

Page 7

Philips Semiconductors 3 V GS(th) (V) 2.5 typ 2 1.5 min 1 0.5 0 - Fig 9. Gate-source threshold voltage as a ...

Page 8

Philips Semiconductors T Fig 13. Source (diode forward) current as a function of source-drain (diode forward) 9397 750 07153 Product specification N-channel enhancement mode field-effect transistor (A) 0.8 0.6 0.4 0.2 0 ...

Page 9

Philips Semiconductors 9. Package outline Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 mm 5.0 0.40 ...

Page 10

Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 03 20000519 HZG336 Product specification; third version. Converted to TrenchMOS™ technology. 02 19970617 - Product specification; second version. 01 19901031 - Product specification; initial version. 9397 750 ...

Page 11

Philips Semiconductors 11. Data sheet status Datasheet status Product status Definition Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data ...

Page 12

Philips Semiconductors Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. ...

Page 13

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

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