IRF630NS International Rectifier, IRF630NS Datasheet

IRF630NS

Manufacturer Part Number

IRF630NS

Description

MOSFET N-CH 200V 9.3A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF630NSTRL.pdf (12 pages)

Specifications of IRF630NS

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

300 mOhm @ 5.4A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

9.3A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

35nC @ 10V

Input Capacitance (ciss) @ Vds

575pF @ 25V

Power - Max

82W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRF630NS

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Company

Part Number

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Quantity

Price

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Current page: 1 of 12
Download datasheet (244Kb)

Fifth Generation HEXFET

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation levels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

The through-hole version (IRF630NL) is available for low-

profile application.

Absolute Maximum Ratings

Description

www.irf.com

dv/dt

STG

Pak is suitable for high current applications because of its

@ T

Advanced Process Technology

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Ease of Paralleling

Simple Drive Requirements

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Power MOSFETs from

Parameter

†

@ 10V

‚

„

TO-220AB

IRF630N

300 (1.6mm from case )

HEXFET

10 lbf•in (1.1N•m)

-55 to +175

IRF630NS

Max.

9.3

6.5

0.5

9.3

8.2

8.1

±20

Pak

Power MOSFET

DS(on)

DSS

IRF630NS

IRF630NL

= 9.3A

PD - 94005B

IRF630N

= 200V

IRF630NL

= 0.30Ω

TO-262

Units

W/°C

V/ns

°C

10/08/04

Related parts for IRF630NS

IRF630NS Summary of contents

Page 1

... PD - 94005B IRF630N IRF630NS IRF630NL ® HEXFET Power MOSFET 200V DSS R = 0.30Ω DS(on 9. Pak TO-262 IRF630NS IRF630NL Max. Units 9.3 6 0.5 W/°C ± 9.3 A 8.2 mJ 8.1 V/ns -55 to +175 °C 10 lbf•in (1.1N•m) 1 ...

Page 2

IRF630N/S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 10 5.0V BOTTOM 4.5V 1 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS 100 ° 175 C 10 ...

Page 4

IRF630N/S/L 1200 0V MHZ C iss = SHORTED C rss = C gd 1000 C oss = 800 Ciss 600 Coss ...

Page 5

T , Case Temperature ( Case Temperature ( 0.50 1 0.20 0.10 ...

Page 6

IRF630N/S D.U 20V 0.01 Ω Charge www.irf.com 200 15V 150 DRIVER + 100 ...

Page 7

Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent For N-Channel HEXFET www.irf.com + • • ƒ • - „ • • • • ...

Page 8

IRF630N/S/L Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING ...

Page 9

Dimensions are shown in millimeters (inches HIS F530S WITH L OT CODE 8024 AS S EMBL 02, 2000 EMBL Y L INE "L" Note: "P" in ...

Page 10

IRF630N/S/L TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMPLE : T HIS IS AN IRL3103L LOT CODE 1789 MBLE 19, 1997 ...

Page 11

... Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 10/04 IRF630N/S/L 0.368 (.0145) 0.342 (.0135) 24.30 (.957) 23.90 (.941) 4.72 (.136) 4.52 (.178) 60.00 (2.362) MIN. 30.40 (1.197) MAX. 4 & industrial market (IRF630NS/L). TAC Fax: (310) 252-7903 11 ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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