SI4410DY International Rectifier, SI4410DY Datasheet - Page 3

• Manufacturer Part Number: SI4410DY
• Description: MOSFET N-CH 30V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4410DY

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1585pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *SI4410DY

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1000
100
1 0 0 0
10
Fig 3. Typical Transfer Characteristics
1 0 0
Fig 1. Typical Output Characteristics
1 0
0.1
4
TOP
BOTTOM
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V
G S
, Drain-to-Source Voltage (V)
T = -5 5 ° C
, G a te-to-Sou rce Volta ge (V)
J
1
8
4.5V
20µs PULSE WIDTH
T = 25 C
V
2 0 µ s P U L S E W ID TH
J
D S
10
= 2 5 V
1 2
T = 2 5 ° C
T = 1 5 0 ° C
J
°
J
100
1 6
A
1000
Fig 2. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
10
-60 -40 -20
Fig 4. Normalized On-Resistance
0.1
I =
TOP
BOTTOM
D
11A
10A
V
DS
T , Junction Temperature ( C)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
1
20
40
Si4410DY
60
4.5V
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
10V
3
100