SI4410DY International Rectifier, SI4410DY Datasheet - Page 6

• Manufacturer Part Number: SI4410DY
• Description: MOSFET N-CH 30V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4410DY

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1585pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *SI4410DY

Si4410DY
Fig 14. Typical Threshold Voltage Vs.Temperature
6
0 . 2 0
0 . 1 6
0 . 1 2
0 . 0 8
0 . 0 4
0 . 0 0
3.0
2.5
2.0
1.5
Fig 12. Typical On-Resistance Vs. Drain
-60
0
-40
T , Jun ction T em peratu re (°C )
-20
J
1 0
0
I , D rain C urren t (A )
D
2 0
Current
2 0
4 0
V
V
G S
G S
6 0
= 10V
= 4.5V
3 0
8 0
I
D
1 0 0 1 2 0 1 4 0 1 6 0
=2 50µA
4 0
5 0
A
A
Fig 13. Typical On-Resistance Vs. Gate
1000
0 . 0 3
0 . 0 2
0 . 0 1
0 . 0 0
800
600
400
200
0
25
3
Fig 15. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
V
4
G S
50
, G ate-to- Sou rc e V oltage (V )
Vs. Drain Current
Voltage
5
J
75
6
7
100
I
TOP
BOTTOM
D
www.irf.com
= 10A
8
125
9
°
4.5A
8.0A
I D
10A
150
1 0
A