IRL1104 International Rectifier, IRL1104 Datasheet - Page 2

MOSFET N-CH 40V 104A TO-220AB

IRL1104

Manufacturer Part Number
IRL1104
Description
MOSFET N-CH 40V 104A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL1104

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 62A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
104A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
68nC @ 4.5V
Input Capacitance (ciss) @ Vds
3445pF @ 25V
Power - Max
167W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRL1104

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IRL1104
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
ƒ

Notes:
V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
I
I
d(on)
r
d(off)
f
S
on
DSS
GSS
SM
rr
V
fs
S
GS(th)
D
(BR)DSS
DS(on)
oss
SD
gd
iss
rss
2
g
gs
rr
V
I
Repetitive rating; pulse width limited by
R
T
(BR)DSS
max. junction temperature. ( See fig. 11 )
SD
DD
J
G
= 25 , I
= 15V, starting T
175°C
62A, di/dt
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resis-
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
AS
Drain-to-Source Leakage Current
=62A. (See Figure 12)
217A/µs, V
J
= 25°C, L = 0.18mH
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
–––
1.0
Min. Typ. Max. Units
53
–––
–––
–––
40
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
Calculated continuous current based on maximum allowable
Pulse width
package refer to Design Tip # 93-4
junction temperature;for recommended current-handling of the
3445 –––
1065 –––
0.04 –––
–––
––– 0.008
––– 0.012
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
257
270
–––
4.5
7.5
––– 104…
–––
223
18
32
64
84
–––
–––
416
–––
–––
250
100
–––
–––
–––
–––
–––
335
–––
126
1.3
25
68
24
33
300µs; duty cycle
V/°C
nA
nC
nH
µA
ns
pF
nC
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
ƒ = 1.0MHz, See Fig. 5
di/dt = 100A/µs „
V
showing the
p-n junction diode.
T
T
MOSFET symbol
integral reverse
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= 62A
= 62A
= 25°C, I
= 25°C, I
= 3.6 , V
= 0.4 , See Fig. 10 „
= V
= 40V, V
= 32V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 25V, I
= 32V, V
= 16V
= -16V
= 4.5V, See Fig. 6 and 13 „
= 20V
= 0V
GS
, I
D
S
F
2%.
D
D
D
= 250µA
D
GS
GS
GS
Conditions
= 62A, V
= 62A
Conditions
= 250µA
= 62A
= 62A „
= 52A „
= 0V
= 0V, T
= 4.5V
D
GS
= 1mA
J
= 150°C
= 0V „
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S
+L
D
G
)
G
D
S
S
D

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