IRL1104 International Rectifier, IRL1104 Datasheet - Page 7

MOSFET N-CH 40V 104A TO-220AB

IRL1104

Manufacturer Part Number
IRL1104
Description
MOSFET N-CH 40V 104A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL1104

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 62A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
104A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
68nC @ 4.5V
Input Capacitance (ciss) @ Vds
3445pF @ 25V
Power - Max
167W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRL1104

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Re-Applied
Voltage
Reverse
Recovery
Current

+
-
R
D.U.T
G
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
Fig 14. For N-Channel
= 5V for Logic Level Devices
P.W.
SD
DS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
Body Diode Forward
+
-
ƒ
dv/dt controlled by R
I
Driver same type as D.U.T.
D.U.T. - Device Under Test
Diode Recovery
5%
SD
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
HEXFET power MOSFETs
di/dt
Ground Plane
Low Stray Inductance
Low Leakage Inductance
Current Transformer
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
V
DD
*
IRL1104
7

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