IRL1104L International Rectifier, IRL1104L Datasheet - Page 3

MOSFET N-CH 40V 104A TO-262

IRL1104L

Manufacturer Part Number
IRL1104L
Description
MOSFET N-CH 40V 104A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL1104L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 62A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
104A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
68nC @ 4.5V
Input Capacitance (ciss) @ Vds
3445pF @ 25V
Power - Max
2.4W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRL1104L

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRL1104L
Manufacturer:
IR
Quantity:
12 500
Price:
www.irf.com
1000
1000
100
100
10
10
1
Fig 1. Typical Output Characteristics
1
0.1
2.0
Fig 3. Typical Transfer Characteristics
TOP
BOTTOM
V
V
DS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
GS
, Drain-to-Source Voltage (V)
4.0
T = 25 C
, Gate-to-Source Voltage (V)
J
1
°
2.7V
6.0
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
J
DS
T = 175 C
10
J
= 50V
25
8.0
°
°
10.0
100
1000
100
2.5
2.0
1.5
1.0
0.5
0.0
10
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0
TOP
BOTTOM
I =
D
Fig 4. Normalized On-Resistance
V
104A
DS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
Vs. Temperature
20 40 60 80 100 120 140 160 180
1
2.7V
IRL1104S/L
20µs PULSE WIDTH
T = 175 C
J
10
°
V
°
GS
=
10V
3
100

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