IRL1104STRL International Rectifier, IRL1104STRL Datasheet - Page 2

MOSFET N-CH 40V 104A D2PAK

IRL1104STRL

Manufacturer Part Number
IRL1104STRL
Description
MOSFET N-CH 40V 104A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL1104STRL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 62A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
104A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
68nC @ 4.5V
Input Capacitance (ciss) @ Vds
3445pF @ 25V
Power - Max
2.4W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
IRL1104S/L
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
R
L
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
I
V
t
Q
t
DSS
GSS
d(on)
d(off)
f
S
on
r
SM
rr
S
V
fs
DS(on)
(BR)DSS
GS(th)
SD
iss
oss
rss
Repetitive rating; pulse width limited by
For recommended footprint and soldering techniques refer to application note #AN-994.
g
gs
gd
I
2
rr
V
T
max. junction temperature. ( See fig. 11 )
R
(BR)DSS
SD
J
DD
G
= 25 , I
= 15V, starting T
175°C
62A, di/dt
/ T
J
Static Drain-to-Source On-Resistance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
AS
= 62A. (See Figure 12)
217A/µs, V
J
= 25°C, L = 0.18mH
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Calculated continuous current based on maximum allowable
Pulse width
Uses IRL1104 data and test conditions.
junction temperature;for recommended current-handling of the
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
package refer to Design Tip # 93-4
1.0
Min. Typ. Max. Units
40
53
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
3445 –––
1065 –––
0.04
7.5
–––
––– 0.008
––– 0.012
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
257
270
–––
–––
–––
223
18
32
64
84
104
–––
–––
–––
–––
250
100
–––
–––
–––
–––
–––
126
335
416
1.3
25
68
24
34
300µs; duty cycle
V/°C
µA
nA
nC
pF
nC
nH
W
ns
V
V
S
A
V
V
V
I
V
ƒ = 1.0MHz, See Fig. 5
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
R
R
Between lead,
and center of die contact
V
V
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
MOSFET symbol
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
=62A
=54A
= 25°C, I
= 25°C, I
= 3.6 , V
= 0.4 , See Fig. 10
= V
= 25V, I
=40V, V
= 32V, V
= 16V
= 32V
= 0V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= -16V
= 4.5V, See Fig. 6 and 13
= 20V
2%.
GS
, I
D
S
F
D
D
D
GS
= 250µA
D
GS
Conditions
=62A, V
=62A
GS
= 250µA
Conditions
= 62A
= 62A
= 52A
= 0V
= 0V, T
= 4.5V
D
www.irf.com
GS
=1mA
J
= 0V
= 150°C
G
S
+L
S
D
D
)

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