IRFR12N25D International Rectifier, IRFR12N25D Datasheet
IRFR12N25D
Specifications of IRFR12N25D
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IRFR12N25D Summary of contents
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... Typ. ––– ––– ––– 94296A IRFR12N25D IRFU12N25D ® Power MOSFET R max I DS(on) D 0.26 14A D-Pak I-Pak IRFR12N25D IRFU12N25D Max. Units 14 9 144 W 0.96 W/°C ± 9.3 V/ns °C Max. Units 1.04 50 ° ...
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... IRFR12N25D/IRFU12N25D Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...
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... Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100.00 10.00 1. 25°C 0. 15V 20µs PULSE WIDTH 0.01 5.0 7.0 9.0 11 Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com IRFR12N25D/IRFU12N25D 100 TOP 10 BOTTOM 5.0V 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 3 3 175°C 2.5 2 ...
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... IRFR12N25D/IRFU12N25D 10000 0V MHZ C iss = rss = oss = 1000 Ciss 100 Coss Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100. 175°C 10. 25°C 1.00 0.10 0.0 1 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 1000 Fig 6. Typical Gate Charge Vs. ...
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... D = 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRFR12N25D/IRFU12N25D R Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms 0 ...
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... IRFR12N25D/IRFU12N25D Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 550 440 + 330 220 110 Starting T , Junction Temperature Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit I D TOP 3.4A 5 ...
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... Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFET www.irf.com IRFR12N25D/IRFU12N25D Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane ƒ Low Leakage Inductance Current Transformer - „ dv/dt controlled Driver same type as D ...
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... IRFR12N25D/IRFU12N25D D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (. (. (. 1 1 D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 ASSEMBLY LINE "A" (. (. (. (. (. (. & (. INT ERNAT IONAL RECT IFIER LOGO ASSEMBLY LOT CODE 1 ...
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... B - 2 1 .28 (. I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 1999 SEMBLY LINE "A" www.irf.com IRFR12N25D/IRFU12N25D (. (. (. (. (. (. & . 0 INT ERNAT IONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER DAT E CODE ...
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... IRFR12N25D/IRFU12N25D D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches 12 11 LLIN G D IME ILL ILLIM -481 & - -481 . Notes: Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 7.1mH 8.4A ƒ I 8.4A, di/dt 150A/µ ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...