IRFBA1405P International Rectifier, IRFBA1405P Datasheet
IRFBA1405P
Specifications of IRFBA1405P
Q1429145
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IRFBA1405P Summary of contents
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... J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Recommended clip force www.irf.com AUTOMOTIVE MOSFET junction operating package that @ 10V GS @ 10V GS See Fig.12a, 12b, 15, 16 IRFBA1405P ® HEXFET Power MOSFET 55V DSS R = 5.0m DS(on 174A† Max. Units 174† 123† ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...
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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° T ...
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0V MHZ C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 1 ...
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LIMITED BY PACKAGE 160 120 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE ...
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D.U 20V 0. Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. ...
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Duty Cycle = Single Pulse 0.01 100 0. 1.0E-08 1.0E-07 Fig 15. Typical Avalanche Current Vs.Pulsewidth 600 TOP Single Pulse BOTTOM 10% Duty Cycle 500 101A 400 300 200 100 ...
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D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent For N-channel 8 + ƒ - „ - P.W. Period D = Period Body Diode Forward Current ...
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A 1.50 [.059] 0.50 [.020 4.00 [.157] 3.50 [.138] 2.55 [.100] 2X NOT ES: 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER. 3. DIMENS IONS ARE SHOWN IN MILLIMET ...