STP36NE06 STMicroelectronics, STP36NE06 Datasheet - Page 3

• Manufacturer Part Number: STP36NE06
• Description: MOSFET N-CH 60V 36A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP36NE06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2800pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2763-5

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Symbol
Symbol
Symbol
(di/dt)
V
I
t
SDM
t
I
r(Voff)
SD
Q
Q
d(on)
I
Q
RRM
Q
t
SD
t
t
t
rr
gd
c
r
gs
f
rr
g
( )
( )
on
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
V
R
V
V
R
I
I
V
SD
SD
DD
DD
DD
DD
DD
G
G
G
=4.7
= 4.7
=4.7
= 36 A
= 36 A
= 30 V
= 48 V
= 48 V
= 48 V
= 30 V
Test Conditions
Test Conditions
Test Conditions
V
V
I
GS
I
D
GS
D
T
di/dt = 100 A/ s
j
= 36 A
V
= 36 A
= 10 V
= 150
= 0
I
I
GS
D
D
V
Safe Operating Area for TO-220FP
= 18 A
= 36 A
GS
=10 V
= 10 V
o
C
V
GS
= 10 V
Min.
Min.
Min.
Typ.
Typ.
Typ.
250
245
6.5
28
85
50
13
18
12
25
40
75
STP36NE06FP
Max.
Max.
Max.
115
144
1.5
40
70
16
35
55
36
Unit
A/ s
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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